一种有源钳位隔离型无桥SEPIC PFC变换器*

doi:10.11985/2023.03.022

摘要/Abstract

摘要：

传统隔离型SEPIC功率因数校正(Power factor correction, PFC)变换器的开关管电压应力大，且因输入端整流桥的存在，自身效率难以进一步提升。使用无桥PFC和有源钳位技术对SEPIC PFC变换器进行改进，提出了一种有源钳位隔离型无桥SEPIC PFC变换器，通过使用开关管和快恢复二极管替代整流桥，改善了变换器效率；通过运用有源钳位技术，实现了开关管的软开关，降低了开关管的电压应力，并进一步提高了变换器效率。最后，设计了一台输出功率为70 W的应用于飞机座椅电源的试验样机，仅使用一级变换器就实现了高功率因数、高效率和输入输出的隔离，验证了理论分析的正确性。

关键词: 功率因数校正, SEPIC变换器, 有源钳位, 无桥变换器

Abstract:

The voltage stress of the power switch of the traditional isolated SEPIC power factor correction(PFC) converter is large, the efficiency of the traditional isolated SEPIC PFC converter is also limited because of the existence of the input rectifier bridge. An active clamped bridgeless isolated SEPIC PFC converter is proposed by using the bridgeless PFC technology and active clamp technology. Through the elimination of the rectifier bridge, the efficiency of the proposed converter is improved; through the use of active clamping technology, the soft switching of all switches is realized, the voltage stress of the power switch is reduced. Finally, a 70 W experimental prototype for aircraft in-seat power supply is built to achieve high power factor, high efficiency, and isolation between input and output, which verifies the correctness of the theoretical analysis.

Key words: Power factor correction, SEPIC converter, active clamping, bridgeless converter

中图分类号:

TM46

刘入铫, 沈霞, 陈锐, 向俊君, 王志豪. 一种有源钳位隔离型无桥SEPIC PFC变换器^*[J]. 电气工程学报, 2023, 18(3): 206-215.

LIU Ruyao, SHEN Xia, CHEN Rui, XIANG Junjun, WANG Zhihao. An Active Clamped Bridgeless Isolated SEPIC PFC Converter[J]. Journal of Electrical Engineering, 2023, 18(3): 206-215.

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参数	数值(型号)
输入交流电压有效值V_rms/V	90~135
输入交流电压频率f_g/Hz	400
开关频率f_s/kHz	50
输出直流电压V₀/V	28
输出功率P_O/W	70
变压器T变比n_p∶n_s	3.3∶1
输入电感L₁/μH	250
中间电容C₁/μF	1
钳位电容C_c/μF	0.47
励磁电感L_m/μH	300
输出滤波电容C₀/μH	2 000
功率开关管S₁、S₂、S₃型号	FCP11N60F
主二极管VD₁、VD₂型号	FFSP1665A
副边二极管VD₀型号	MBR40250

方法	主电路结构(复杂度)	输入电压范围/频率	输出电压/V	输出功率/W	开关频率/ kHz	功率器件数量	峰值效率(%)	控制电路复杂度	成本
文献[9]	单级隔离 (一般)	220 V/50 Hz	108	37.8	100	2MOSFET，8二极管	83	一般	中
文献[17]	单级非隔离(一般)	120 V/60 Hz	50	100	100	1MOSFET，5二极管	90.5	复杂	低
文献[20]	多级隔离 (复杂)	90~265 V/50 Hz	12	300	20	9MOSFET，6二极管	85	复杂	高
文献[21]	单级隔离 (一般)	90~130 V/50 Hz	100	80	50	2MOSFET，2二极管	89.5	一般	中
文献[22]	单级隔离 (一般)	110 V/50 Hz	48	150	50	4MOSFET，3二极管	91	一般	中
本文	单级隔离 (一般)	90~135 V/400 Hz	28	70	50	3MOSFET，3二极管	90.22	简单	低