青藏客车辅助逆变电源IGBT模块寿命的特征参数研究

doi:10.11985/2022.02.004

摘要/Abstract

摘要：

辅助逆变电源广泛应用于轨道交通领域中,而绝缘栅双极型晶体管(Insulated gate bipolar transistor, IGBT)作为其功率电子器件的常用选择,成为辅助逆变电源研究的重点。根据青藏客车辅助逆变电源IGBT模块部件性能特征,使用功率循环试验的方法,掌握其性能随运行时间/里程的变化规律,估计其长期服役后的运用可靠性,为极端环境下辅助逆变电源IGBT模块全寿命周期性能研究以及剩余寿命评估提供参考。结果表明,经历极端环境下的IGBT 模块老化寿命可以从阈值电压与热阻两种劣化参数变化中预测得出,其中阈值电压相对变化需要根据多芯片并联情况下芯片的类型与连接方式视情况而定,热阻随老化情况呈阶梯式上升趋势。

关键词: 焊接式IGBT, 功率循环试验, 阈值电压, 热阻

Abstract:

The auxiliary inverter is widely used in the field of rail transit, and the insulated gate bipolar transistor(IGBT), as the common choice of its power electronics, has become the focus of the research of the auxiliary inverter. According to the performance characteristics of IGBT module components of Qinghai-Tibet bus auxiliary inverter power supply, the method of power cycle test is used to grasp the change law of its performance with running time/mileage, and estimate its reliability after long-term service. At the same time, this method can also be used to research the full life cycle performance of the IGBT module in extreme environments, and to provide a reference for the IGBT module’s remaining life evaluation. The results show that the aging life of IGBT modules in extreme environment can be predicted from the changes of two deterioration parameters, threshold voltage and thermal resistance. The relative change of threshold voltage depends on the type and connection mode of multiple chips in parallel, and the thermal resistance increases step by step with aging.

Key words: Welded IGBT, power cycle test, threshold voltage, thermal resistance

中图分类号:

U221

向超群, 尹雪瑶, 成庶, 于天剑, 张璐琳. 青藏客车辅助逆变电源IGBT模块寿命的特征参数研究[J]. 电气工程学报, 2022, 17(2): 27-37.

XIANG Chaoqun, YIN Xueyao, CHENG Shu, YU Tianjian, ZHANG Lulin. Study on Characteristic Parameters of IGBT Module Life of Qinghai-Tibet Bus Auxiliary Inverter[J]. Journal of Electrical Engineering, 2022, 17(2): 27-37.

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测试参数			失效原则
V_CE(sat)	BSM300GA120DN2	V_GE=15 V, I_C=300 A	+5%
V_CE(sat)	BSM100GB120DN2K	V_GE=15 V, I_C=100 A	+5%
I_CES	V_CE=1 200 V, V_GE=0 V		+20%
V_GE(th)	BSM300GA120DN2	V_GE=V_CE, I_C=12 mA	+20%
V_GE(th)	BSM100GB120DN2K	V_GE=V_CE, I_C=4 mA	+20%
I_GES	V_GE=20 V, V_CE=0 V		+20%
R_th(j-c)	BSM300GA120DN2	V_GE=15 V, I_C=200 A, I_m=50 mA	+20%
R_th(j-c)	BSM100GB120DN2K	V_GE=15 V, I_C=50 A, I_m=50 mA	+20%

功率循环试验项目	测试条件		样品编号
秒级 QL-01	BSM300GA120DN2	T_jmax=120 ℃, T_jmin=30 ℃, ΔT_j=90 ℃, t_cycle=10 s, 共进行180 000 次循环	3-5-3 3-5-4 3-5-5 3-5-6
秒级 QL-01	BSM100GB120DN2K		1-5-7 1-5-8 1-5-9
分钟级 QL-02-1	BSM300GA120DN2	T_jmax=140 ℃, T_jmin=15 ℃, ΔT_j=125 ℃, t_cycle=2 min, 共进行19 000次循环	3-1-1 3-1-2 3-5-5 3-5-7 3-5-9
分钟级 QL-02-1	BSM100GB120DN2K		1-1-1 1-5-1 1-5-4 1-5-6
分钟级 QL-02-2	BSM300GA120DN2	T_jmax=115 ℃, T_jmin=25 ℃, ΔT_j=90 ℃, t_cycle=1.5 min, 共进行24 000次循环	3-1-3 3-5-1 3-5-2 3-5-6
分钟级 QL-02-2	BSM100GB120DN2K		1-1-2 1-5-2 1-5-3 1-5-5

样品编号	平均空洞率(%)
	芯片与DBC之间的焊料层		DBC与散热底板之间的焊料层
		初始测试	最终测试	初始测试	最终测试
3-5-3	0.32	0.51	0.01	0.07
3-5-4	0.14	0.26	0.82	1.62
3-5-8	0.38	0.87	1.27	1.88
3-5-10	0.36	0.57	0.12	0.12

样品编号	V_CE(sat)	I_CES	V_GE(th)	I_GES	是(1)否(0)失效
3-5-3	13.28	73 974.07	0	373 622.63	1
3-5-4	12.41	36 075.40	0.69	11.99	1
3-5-8	9.52	46 328.57	-71.45	172 116 939.59	1
3-5-10	12.50	1.25	0.34	16 933.71	1
3-1-1	1 136.16	67 126.89	20.90	190 476 090.48	1
3-1-2	1 117.99	55 072.41	26.74	218 340 511.35	1
3-5-5	364.68	6.15	-96.43	174 215 927.87	1
3-5-7	5.77	3.81	1.05	3.31	1
3-5-9	13.31	0.88	0.68	1.14	1
3-1-3	0.37	1.76	0	7.12	0
3-5-1	5.95	2.97	-0.34	7.89	1
3-5-2	2.26	1.80	-0.35	7.54	0
3-5-6	2.96	2.91	-0.36	4.86	0
1-5-7	4.80	0.24	0.39	-1.08	0
1-5-8	3.97	-0.47	0.37	2.82	0
1-5-9	0.39	-3.56	-0.68	4.73	0
1-1-1	997.14	368 563.59	19.14	1 999 999 900.00	1
1-5-1	-3.60	-3.89	0.36	13.60	0
1-5-4	-2.81	-1.82	0.73	3.85	0
1-5-6	-1.57	-2.79	1.10	9.03	0
1-1-2	669.44	302 930.30	-72.63	1 351 351 251.35	1
1-5-2	-1.17	2.19	0.68	3.33	0
1-5-3	-1.54	0.80	0.38	2.54	0
1-5-5	-0.80	-1.29	0.38	6.62	0

功率循环试验项目	BSM100GB120DN2K		BSM300GA120DN2
功率循环试验项目	新品循环次数	五级修剩余循环次数	新品循环次数	五级修剩余循环次数
QL-01	—	87 377	—	48 132
QL-02-1	16 514	18 546	16 937	7 500
QL-02-2	24 791	22 821	33 671	20 629