High Gain DC/DC Converter with Double Voltage DCM Structure

doi:10.11985/2023.01.010

Abstract

Abstract:

To increase the voltage gain of the DC-DC converter, reduce the voltage stress of the switch, combine the coupled inductor multiplier unit with the diode-capacitor multiplier(DCM) unit, and a double DCM structure is proposed and introduced into a non-isolated converter with output diode. Not only the voltage gain of the converter is improved, but also the voltage stress of the semiconductor is reduced. Meanwhile, the diode-capacitor branch in the structure is used as a passive clamping branch to absorb the leakage inductor energy and improve the efficiency of the converter. The working mode and working performance of the proposed SEPIC-based converter are analyzed, which containing a double DCM structure. The working state of the inductor current is analyzed. Compared with the same type converter, the advantages of proposed type of converter with high gain and low stress are fully proven. Finally, a 60 W experimental prototype is built to verify the correctness of the theory.

Key words: Double pressure DCM unit, high gain, low voltage stress, passive clamp

CLC Number:

TM46

RONG Desheng, LIU Lei, SUN Xuanjin, HU Jushuang. High Gain DC/DC Converter with Double Voltage DCM Structure[J]. Journal of Electrical Engineering, 2023, 18(1): 94-103.

Figures/Tables 19

References 17

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变换器	电压增益M_CCM(V_o/V_in)	开关管应力 (V_vpsS/V_o)	输出端二级管应力 (V_vpsD/V_o)
Sepic	$\frac{D}{1-D}$	$\frac{1}{D}$	$\frac{1}{D}$
文献[6]	$\frac{1+\left( N+1 \right)D}{1-D}$	$\frac{1}{1+\left( N+1 \right)D}$	$\frac{1+N}{1+\left( N+1 \right)D}$
文献[8]	${{N}_{1}}+\frac{2-D+{{N}_{2}}}{1-D}$	$\frac{1}{2-D+\left( 1-D \right){{N}_{1}}+{{N}_{2}}}$	$\frac{{{N}_{2}}}{2-D+\left( 1-D \right){{N}_{1}}+{{N}_{2}}}$
文献[9]	${{N}_{1}}+\frac{\left( 1+{{N}_{1}}+{{N}_{2}} \right)D}{1-D}$	$\frac{1}{{{N}_{1}}+D+{{N}_{2}}D}$	$\frac{{{N}_{1}}}{{{N}_{1}}+D+{{N}_{2}}D}$
本文	$\frac{1+{{N}_{1}}+{{N}_{2}}+D}{1-D}$	$\frac{1}{1+{{N}_{1}}+{{N}_{2}}+D}$	$\frac{{{N}_{2}}+1}{1+{{N}_{1}}+{{N}_{2}}+D}$

变换器	电压增益M_CCM(V_o/V_in)	开关管应力 (V_vpsS/V_o)
Buck-Boost变换器+双倍压DCM结构	$\frac{1+D+\left( {{N}_{1}}+{{N}_{2}} \right)}{1-D}$	$\frac{1}{1+\left( {{N}_{1}}+{{N}_{2}} \right)+D}$
Boost变换器+双倍压DCM结构	$\frac{2+\left( {{N}_{1}}+{{N}_{2}} \right)}{1-D}$	$\frac{1}{2+\left( {{N}_{1}}+{{N}_{2}} \right)}$
Sepic变换器+双倍压DCM结构	$\frac{1+D+\left( {{N}_{1}}+{{N}_{2}} \right)}{1-D}$	$\frac{1}{1+\left( {{N}_{1}}+{{N}_{2}} \right)+D}$

参数	数值和型号
输入电压V_in/V	12
输出电压V_o/V	105
额定功率P_o/W	60
耦合电感匝比n	1∶1∶1
励磁电感L_m/μH	65
漏感L_k/μH	1.2
前端电感L₁/μH	50
电容C₁、C₂、C₃、C₄	100 μF/160 V
输出电容C₀	100 μF/250 V
开关管S	IRF540N
二极管	MBR20100CT
开关频率f/kHz	50
占空比	0.6