Research on PID Effect and PID Repair of PV Module on Site

doi:10.11985/2023.02.026

Abstract

Abstract:

The practical application scheme for anti-PID(Potential induced degradation) of photovoltaic module at system level of photovoltaic power station is mainly PID suppression and PID repair. However, there is no relevant research and conclusion on how to choose these two schemes on site and the actual anti-PID effect comparison of the two schemes is unclear. Through the on site experiment platform and laboratory platform, the PID effect and repair experiments with various types and specs of PV modules are carried out, and the data onto IV and EL test are collected. At the practical level, the two anti-PID technical routes are studied and demonstrated, and the on site optimal solution to the anti-PID phenomenon of PV systems with different topologies is obtained, which provides certain guidance for the contruction, operation and maintenance of photovaltaic power stations.

Key words: PV module, potential induced degradation(PID), PID suppression, PID repair, virtual grounding, backward voltage repair

CLC Number:

TM914

LI Da, ZHENG Haixing, ZHANG Jianrui, WU Chaohui WENG Junhua, JIANG He, XIAO Wen. Research on PID Effect and PID Repair of PV Module on Site[J]. Journal of Electrical Engineering, 2023, 18(2): 254-259.

Figures/Tables 13

References 16

[1]	CUETO J, TRUDELL D, SEKULIC W. Capabilities of the high voltage stress test system at the outdoor test facility[C]// DOE Solar Energy Technologies Program Review Meeting,Denver,America, 2005.
[2]	孟庆法, 田茜茜. 光伏组件PID失效与DH失效的微观分析研究[J]. 太阳能, 2021(2):17-25.
	MENG Qingfa, TIAN Qianqian. Microscopic analysis of PID failure and DH failure of photovoltaic modules[J]. Solar Energy, 2021(2):17-25.
[3]	HACKE P, TERWILLIGER K, CLICK S, et al. Requirements for a standard test to rate the durability of PV modules at system voltage[C]// Photovoltaic Module Reliability Workshop,Colorado,USA, 2011.
[4]	申织华, 张新生, 江新峰, 等. 光伏组件PID效应问题研究[J]. 电源技术, 2016, 40(6):1327-1329.
	SHEN Zhihua, ZHANG Xinsheng, JIANG Xinfeng, et al. Study on PID effect of photovoltaic module[J]. Chinese Journal of Power Sources, 2016, 40(6):1327-1329.
[5]	何宝华, 杜军伟, 王慧, 等. 晶体硅光伏组件抗PID机理研究[J]. 太阳能学报, 2015, 36(11):2698-2702.
	HE Baohua, DU Junwei, WANG Hui, et al. Study on the anti-PID mechanism of crystalline silicon photovoltaic module[J]. Acta Energiae Solaris Sinica, 2015, 36(11):2698-2702.
[6]	曾雪华, 张志根, 蒋建平. PID效应及影响因素[J]. 太阳能, 2013(3):25-30.
	ZENG Xuehua, ZHANG Zhigen, JIANG Jianping. PID effect and influencing factors[J]. Solar Energy, 2013(3):25-30.
[7]	孙仲刚, 于波, 刘克铭, 等. 光伏组件PID效应及解决方案论析[J]. 河北工业科技, 2016, 33(2):151-157.
	SUN Zhonggang, YU Bo, LIU Keming, et al. Analysis of PID effect of photovoltaic module and its solution[J]. Hebei Industrial Science and Technology, 2016, 33(2):151-157.
[8]	姚明, 郭积晶. 基于电池组件PID效应的光伏逆变器设计[J]. 大功率变流技术, 2014(3):49-51.
	YAO Ming, GUO Jijing. Design of photovoltaic inverter based on PID effect of battery module[J]. High Power Converter Technology, 2014(3):49-51.
[9]	赵俊青, 高立明, 李志辉. 光伏电站组件抗PID效应恢复效果分析[J]. 应用能源技术, 2018(2):42-44.
	ZHAO Junqing, GAO Liming, LI Zhihui. Analysis of recovery effect of photovoltaic power station module against PID effect[J]. Applied Energy Technology, 2018(2):42-44.
[10]	龚铁裕, 相海涛, 黎文. 解决光伏电站组件的抗潜在电势诱导衰减效应的方法[J]. 电力与能源, 2014, 35(4):525-527.
	GONG Tieyu, XIANG Haitao, LI Wen. A method to solve the potential-induced attenuation effect of photovoltaic power station components[J]. Electricity and Energy, 2014, 35(4):525-527.
[11]	薛鸿斐, 刘江峰, 黄静, 等. 晶体硅光伏组件PID效应实地修复效果[J]. 太阳能, 2018(2):42-45.
	XUE Hongfei, LIU Jiangfeng, HUANG Jing, et al. Field repair effect of PID effect of crystalline silicon photovoltaic module[J]. Solar Energy, 2018(2):42-45.
[12]	谢磊, 万宏, 潘高枫. 1 500 V光伏系统PID效应解决方案探讨[J]. 太阳能, 2018(5):25-29.
	XIE Lei, WAN Hong, PAN Gaofeng. Solution of PID effect in 1 500 V photovoltaic system[J]. Solar Energy, 2018(5):25-29.
[13]	MARTINEZ-MORENO F, FIGUEIREDO G, LORENZO E. In-the-field PID related experiences[J]. Solar Energy Materials and Solar Cells, 2018, 174:485-493. doi: 10.1016/j.solmat.2017.09.037
[14]	NAUMANN V, LAUSCH D, HAHNEL A, et al. Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells[J]. Solar Energy Materials and Solar Cells, 2014(120):383-389.
[15]	BERGHOLD J, FRANK O, HOEHNE H, et al. Potential induced degradation of solar cells and panels[C]// Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition,Valencia,Spain, 2010:3753-3759.
[16]	PINGEL S, FRANK O, WINKLER M, et al. Potential induced degradation of solar cells and panels[C]// 35th IEEE Photovoltaic Specialists Conference (PVSC), June 20-25,2010,Honolulu,HI,USA. IEEE, 2010:2817-2822.

组件信息	初始功率/W	PID衰减测试后功率/W	功率衰减比例(%)	PID修复测试后功率/W	功率修复比例(%)
单晶，品牌a	291.4	289.9	0.50	287.4	98.6
单晶，品牌a	296.7	291.5	1.70	291.3	98.20
单晶，品牌b	297.0	294.9	0.70	296.3	99.70
单晶，品牌b	300.1	298.9	0.40	298.7	99.60
单晶，品牌c	329.4	323.3	1.90	322.3	97.80
单晶，品牌c	328.2	323.1	1.50	321.7	98.00

组件信息	初始功率/W	运行2个月后功率/W	功率衰减比例(%)
常规多晶，品牌a	258.2	255.4	-1.08
常规多晶，品牌a	252.5	245.9	-2.61
常规多晶，品牌a	265.5	259.5	-2.26
单晶PERC，品牌a	301.0	297.9	-1.03
单晶PERC，品牌a	300.7	294.8	-1.97
单晶PERC，品牌a	294.2	288.3	-2.03
单晶PERC，品牌a	300.4	295.5	-1.63
双玻PERC单晶，品牌a	295.9	285.7	-3.45
双玻PERC单晶，品牌a	291.2	285.6	-1.94

方案	抗PID 效果	施工难度	控制难度	设备成本/(元/W)
虚拟接地	样品运行2个月，最大功率提升24.15%	只需要连接三相交流线等简单接线	可按照设定工作模式自动运行	0.003 5
反压充电	样品运行2个月，最大功率提升21.01%	需要连接多路直流出线与电源线等	可按照设定工作模式自动运行	0.012
虚拟接地+反压充电	样品运行2个月，最大功率提升23.18%	设备数量多，且接线复杂	可按照设定工作模式自动运行	0.015 5