Study on Characteristic Parameters of IGBT Module Life of Qinghai-Tibet Bus Auxiliary Inverter

doi:10.11985/2022.02.004

Abstract

Abstract:

The auxiliary inverter is widely used in the field of rail transit, and the insulated gate bipolar transistor(IGBT), as the common choice of its power electronics, has become the focus of the research of the auxiliary inverter. According to the performance characteristics of IGBT module components of Qinghai-Tibet bus auxiliary inverter power supply, the method of power cycle test is used to grasp the change law of its performance with running time/mileage, and estimate its reliability after long-term service. At the same time, this method can also be used to research the full life cycle performance of the IGBT module in extreme environments, and to provide a reference for the IGBT module’s remaining life evaluation. The results show that the aging life of IGBT modules in extreme environment can be predicted from the changes of two deterioration parameters, threshold voltage and thermal resistance. The relative change of threshold voltage depends on the type and connection mode of multiple chips in parallel, and the thermal resistance increases step by step with aging.

Key words: Welded IGBT, power cycle test, threshold voltage, thermal resistance

CLC Number:

U221

XIANG Chaoqun, YIN Xueyao, CHENG Shu, YU Tianjian, ZHANG Lulin. Study on Characteristic Parameters of IGBT Module Life of Qinghai-Tibet Bus Auxiliary Inverter[J]. Journal of Electrical Engineering, 2022, 17(2): 27-37.

Figures/Tables 18

References 26

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测试参数			失效原则
V_CE(sat)	BSM300GA120DN2	V_GE=15 V, I_C=300 A	+5%
V_CE(sat)	BSM100GB120DN2K	V_GE=15 V, I_C=100 A	+5%
I_CES	V_CE=1 200 V, V_GE=0 V		+20%
V_GE(th)	BSM300GA120DN2	V_GE=V_CE, I_C=12 mA	+20%
V_GE(th)	BSM100GB120DN2K	V_GE=V_CE, I_C=4 mA	+20%
I_GES	V_GE=20 V, V_CE=0 V		+20%
R_th(j-c)	BSM300GA120DN2	V_GE=15 V, I_C=200 A, I_m=50 mA	+20%
R_th(j-c)	BSM100GB120DN2K	V_GE=15 V, I_C=50 A, I_m=50 mA	+20%

功率循环试验项目	测试条件		样品编号
秒级 QL-01	BSM300GA120DN2	T_jmax=120 ℃, T_jmin=30 ℃, ΔT_j=90 ℃, t_cycle=10 s, 共进行180 000 次循环	3-5-3 3-5-4 3-5-5 3-5-6
秒级 QL-01	BSM100GB120DN2K		1-5-7 1-5-8 1-5-9
分钟级 QL-02-1	BSM300GA120DN2	T_jmax=140 ℃, T_jmin=15 ℃, ΔT_j=125 ℃, t_cycle=2 min, 共进行19 000次循环	3-1-1 3-1-2 3-5-5 3-5-7 3-5-9
分钟级 QL-02-1	BSM100GB120DN2K		1-1-1 1-5-1 1-5-4 1-5-6
分钟级 QL-02-2	BSM300GA120DN2	T_jmax=115 ℃, T_jmin=25 ℃, ΔT_j=90 ℃, t_cycle=1.5 min, 共进行24 000次循环	3-1-3 3-5-1 3-5-2 3-5-6
分钟级 QL-02-2	BSM100GB120DN2K		1-1-2 1-5-2 1-5-3 1-5-5

样品编号	平均空洞率(%)
	芯片与DBC之间的焊料层		DBC与散热底板之间的焊料层
		初始测试	最终测试	初始测试	最终测试
3-5-3	0.32	0.51	0.01	0.07
3-5-4	0.14	0.26	0.82	1.62
3-5-8	0.38	0.87	1.27	1.88
3-5-10	0.36	0.57	0.12	0.12

样品编号	V_CE(sat)	I_CES	V_GE(th)	I_GES	是(1)否(0)失效
3-5-3	13.28	73 974.07	0	373 622.63	1
3-5-4	12.41	36 075.40	0.69	11.99	1
3-5-8	9.52	46 328.57	-71.45	172 116 939.59	1
3-5-10	12.50	1.25	0.34	16 933.71	1
3-1-1	1 136.16	67 126.89	20.90	190 476 090.48	1
3-1-2	1 117.99	55 072.41	26.74	218 340 511.35	1
3-5-5	364.68	6.15	-96.43	174 215 927.87	1
3-5-7	5.77	3.81	1.05	3.31	1
3-5-9	13.31	0.88	0.68	1.14	1
3-1-3	0.37	1.76	0	7.12	0
3-5-1	5.95	2.97	-0.34	7.89	1
3-5-2	2.26	1.80	-0.35	7.54	0
3-5-6	2.96	2.91	-0.36	4.86	0
1-5-7	4.80	0.24	0.39	-1.08	0
1-5-8	3.97	-0.47	0.37	2.82	0
1-5-9	0.39	-3.56	-0.68	4.73	0
1-1-1	997.14	368 563.59	19.14	1 999 999 900.00	1
1-5-1	-3.60	-3.89	0.36	13.60	0
1-5-4	-2.81	-1.82	0.73	3.85	0
1-5-6	-1.57	-2.79	1.10	9.03	0
1-1-2	669.44	302 930.30	-72.63	1 351 351 251.35	1
1-5-2	-1.17	2.19	0.68	3.33	0
1-5-3	-1.54	0.80	0.38	2.54	0
1-5-5	-0.80	-1.29	0.38	6.62	0

功率循环试验项目	BSM100GB120DN2K		BSM300GA120DN2
功率循环试验项目	新品循环次数	五级修剩余循环次数	新品循环次数	五级修剩余循环次数
QL-01	—	87 377	—	48 132
QL-02-1	16 514	18 546	16 937	7 500
QL-02-2	24 791	22 821	33 671	20 629